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參數(shù)資料
| 型號： | APTGT35H120T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Trench IGBT Power Module |
| 中文描述： | 全-橋溝道IGBT功率模塊 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 303K |
| 代理商： | APTGT35H120T3 |
APTGT35H120T3
A
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
55
35
70
±20
208
70A@1150V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operation Area
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q3
11
10
Q1
CR1
7
22
13
14
CR3
3
30
29
32
18
19
23
8
15
31
R1
16
4
CR4
CR2
Q2
Q4
26
27
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
V
CES
= 1200V
I
C
= 35A @ Tc = 80°C
Application
Features
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
Trench IGBT
Power Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT35H120T3G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT35SK120D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper Trench IGBT Power Module |
| APTGT35SK120D1G | 功能描述:IGBT 1200V 55A 205W D1 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT35X120BTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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