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參數資料
| 型號： | APTGT35X120BTP3 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 269K |
| 代理商： | APTGT35X120BTP3 |
APTGT35X120RTP3
APTGT35X120BTP3
A
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T
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APT website – http://www.advancedpower.com
1 - 4
All ratings @ Tj = 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VRRM
Repetitive Peak Reverse Voltage
1600
V
ID
DC Forward Current
TC = 80°C
80
Tj = 25°C
320
IFSM
Surge Forward Current
tp = 10ms
Tj = 150°C
260
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGT35X120RTP3: Without Brake (Pin 7 & 14 not connected)
9
8
7
4
5
6
22
23
24
1
2
3
17
18
19
20
10
11
12
14 13
16 15
21
VCES = 1200V
IC = 35A @ Tc = 80°C
Application
AC Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Input rectifier bridge + Brake
+ 3 Phase Bridge
Trench IGBT Power Module
相關PDF資料 |
PDF描述 |
|---|---|
| APTGT35X120RTP3 | 40 A, 1200 V, N-CHANNEL IGBT |
| APTGT35X120BTP3 | 40 A, 1200 V, N-CHANNEL IGBT |
| APTGT35X120RTP3G | 40 A, 1200 V, N-CHANNEL IGBT |
| APTGT35X120RTP3 | 40 A, 1200 V, N-CHANNEL IGBT |
| APTGT35X120BTP3G | 40 A, 1200 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGT35X120BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT35X120RTP3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT35X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT35X120T3G | 功能描述:IGBT MOD TRENCH 3PH BRIDGE SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT400A120 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
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