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參數(shù)資料
| 型號： | APTGT400DA120 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 500 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 270K |
| 代理商： | APTGT400DA120 |
APTGT400DA120
A
P
T
G
T
400
D
A
120
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G2
E2
Q2
0/VBUS
OUT
CR1
VBUS
OUT
0/VBUS
G2
E2
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
560 *
IC
Continuous Collector Current
TC= 80°C
400
ICM
Pulsed Collector Current
TC= 25°C
800
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
1785
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
800A @ 1100V
VCES = 1200V
IC = 400A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Fast Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Boost chopper
Fast Trench + Field Stop IGBT
Power Module
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| APTGT400DU120 | 500 A, 1200 V, N-CHANNEL IGBT |
| APTGT400DU120 | 500 A, 1200 V, N-CHANNEL IGBT |
| APTGT400SK120 | 500 A, 1200 V, N-CHANNEL IGBT |
| APTGT400SK120 | 500 A, 1200 V, N-CHANNEL IGBT |
| APTGT400U170D4 | 800 A, 1700 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT400DA120D3G | 功能描述:IGBT 1200V 580A 2100W D3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT400DA120G | 功能描述:IGBT 1200V 560A 1785W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT400DA60D3G | 功能描述:IGBT 600V 500A 1250W D3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT400DA60D3G_11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Boost chopper Trench + Field Stop IGBT3 Power Module |
| APTGT400DU120 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source Fast Trench + Field Stop IGBT Power Module |
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