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參數(shù)資料
| 型號： | APTGT50DDA120T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Dual Boost chopper Trench IGBT Power Module |
| 中文描述： | 雙升壓斬波溝道IGBT功率模塊 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 298K |
| 代理商： | APTGT50DDA120T3 |
APTGT50DDA120T3
A
APT website – http://www.advancedpower.com
1 - 5
Application
Features
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
75
50
100
±20
270
100A @ 1150V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
J
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Save Operating Area
A
V
W
23
22
13
Q1
CR1
30
8
Q2
7
14
CR2
16
R1
29
15
26
27
4
3
31
32
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
V
CES
= 1200V
I
C
= 50A @ Tc = 80°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
Dual Boost chopper
Trench IGBT
Power Module
相關PDF資料 |
PDF描述 |
|---|---|
| APTGT50DDA60T3 | Dual Boost chopper Trench + Field Stop IGBT Power Module |
| APTGT50DH120T | Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
| APTGT50DH170T | Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| APTGT75DA170D1 | Boost chopper Trench IGBT Power Module |
| APTGT75DU120T | Dual common source Fast Trench + Field Stop IGBT Power Module |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT50DDA120T3G | 功能描述:POWER MOD IGBT TRENCH BOOST SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT50DDA60T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual Boost chopper Trench + Field Stop IGBT Power Module |
| APTGT50DDA60T3G | 功能描述:IGBT MOD TRENCH DL BST CHOP SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT50DH120T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
| APTGT50DH120T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
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