- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57951 > APTGT50DH120T3G (MICROSEMI POWER PRODUCTS GROUP) 75 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APTGT50DH120T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 200K |
| 代理商： | APTGT50DH120T3G |
APTGT50DH120T3G
APT
G
T
50DH120
T
3G
–
Rev
0
Ap
ril,
2009
www.microsemi.com
1- 5
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Fast Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
75
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
277
W
RBSOA Reverse Bias Safe Operating Area
TJ = 125°C
100A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
23
R1
32
30
CR3
CR1
Q4
CR2
CR4
31
29
19
7
22
3
4
18
8
Q1
15
16
13
14
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
VCES = 1200V
IC = 50A @ Tc = 80°C
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT
Power Module
相關PDF資料 |
PDF描述 |
|---|---|
| APTGT50H60T1G | 80 A, 600 V, N-CHANNEL IGBT |
| APTGT50SK170T | 75 A, 1700 V, N-CHANNEL IGBT |
| APTGT50SK170T | 75 A, 1700 V, N-CHANNEL IGBT |
| APTGT50TL60T3G | 80 A, 600 V, N-CHANNEL IGBT |
| APTGT580U60D4G | IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT50DH120TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT50DH170T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| APTGT50DH170TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT50DH60T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| APTGT50DH60TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
發(fā)布緊急采購，3分鐘左右您將得到回復。