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參數資料
| 型號： | APTGT75DH120T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 110 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-14 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 279K |
| 代理商： | APTGT75DH120T |
APTGT75DH120T
A
P
T
G
T
75
D
H
120
T
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC= 25°C
110
IC
Continuous Collector Current
TC= 80°C
75
ICM
Pulsed Collector Current
TC= 25°C
175
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
357
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 125°C
150A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
Q4
OUT2
OUT1
VBUS SENSE
CR3
0/VBUS
G4
E4
NTC2
Q1
CR2
0/VBUS SENSE
NTC1
G1
E1
NTC2
OUT1
OUT2
VBUS
SENSE
E1
NTC1
E4
G4
0/VBUS
SENSE
G1
VCES = 1200V
IC = 75A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Fast Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT
Power Module
相關PDF資料 |
PDF描述 |
|---|---|
| APTGT75DH120T | 110 A, 1200 V, N-CHANNEL IGBT |
| APTGT75DH60T3G | 100 A, 600 V, N-CHANNEL IGBT |
| APTGT75DSK60T3 | 100 A, 600 V, N-CHANNEL IGBT |
| APTGT75DSK60T3 | 100 A, 600 V, N-CHANNEL IGBT |
| APTGT75DU120T | 110 A, 1200 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGT75DH120T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 110A SP3 |
| APTGT75DH120TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT75DH60T1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Asymmetrical - Bridge Trench + Field Stop IGBT Power Module |
| APTGT75DH60T3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT75DH60TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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