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參數資料
| 型號： | APTGV50H60BG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP4, MODULE-21 |
| 文件頁數： | 1/15頁 |
| 文件大?。?/td> | 437K |
| 代理商： | APTGV50H60BG |
APTGV50H60BG
A
P
TG
V50H
60BG
–
R
ev
0
Septe
m
be
r,
2007
www.microsemi.com
1-15
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q3
OUT1A
VBUS1
CR2
Q4
E4
K
D5
Q1
0/VBUS
E2
Q2
G2
S5
SK5
G5
Q
5
CR5
G1
CR1
K
CR4
CR3
VBUS2
OUT2A
D5
OUT2B
OUT1B
S5
G3
G4
Full bridge top switches : Trench + Field Stop IGBT
Full bridge bottom switches : FAST NPT IGBT
Q5 boost chopper : CoolMOS
D5
G2
S5
G5
SK5
VBUS 1
VBUS 2
OUT 2A
OUT 2B
G3
E4
G4
0/VBUS
E2
OUT 1A
OUT 1B
G1
K
All multiple inputs and outputs must be shorted together
OUT1A/OUT1B ; VBUS1/VBUS2 ; K/K ; …
Trench & Field Stop IGBT Q1, Q3:
VCES = 600V , IC = 50A @ Tc = 80°C
Fast NPT IGBT Q2, Q4:
VCES = 600V ; IC = 50A @ Tc = 80°C
CoolMOS Q5:
VCES = 600V ; IC = 49A @ Tc = 25°C
Application
Solar converter
Features
Q2, Q4 (FAST Non Punch Through (NPT) IGBT)
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low tail current
Q1, Q3 (Trench & Field Stop IGBT)
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
Q5 (CoolMOS)
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Optimized conduction & switching losses
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Boost chopper CoolMos
+ full bridge
NPT & Trench + Field Stop IGBT
Power module
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGV50H60BT3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT NPT 600V SP3 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTGV50H60T3G | 功能描述:IGBT NPT BST CHOP FULL BRDG SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGV75H60T3G | 功能描述:IGBT NPT BST CHOP FULL BRDG SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTH003A0X_10 | 制造商:LINEAGEPOWER 制造商全稱:LINEAGEPOWER 功能描述:Pico TLynxTM 3A: Non-Isolated DC-DC Power Modules |
| APTH003A0X4-SRZ | 功能描述:DC/DC轉換器 2.4-5.5Vin 3A 0.6-3.63Vout RoHS:否 制造商:Murata 產品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓（標稱）: 輸出端數量:1 輸出電壓（通道 1）:3.3 V 輸出電流（通道 1）:600 mA 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風格:SMD/SMT 封裝 / 箱體尺寸: |
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