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參數資料
型號: APTM100A13D
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-7
文件頁數: 1/6頁
文件大小: 297K
代理商: APTM100A13D
APTM100A13D
A
P
T
M
100A
13D
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 - 6
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
65
ID
Continuous Drain Current
Tc = 80°C
49
IDM
Pulsed Drain current
240
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
130
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 1000V
RDSon = 130m max @ Tj = 25°C
ID = 65A @ Tc = 25°C
Application
Zero Current Switching resonant mode
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
with Series diodes
MOSFET Power Module
相關PDF資料
PDF描述
APTM100A13SC 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100A13SC 65 A, 1000 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100A18FT 43 A, 1000 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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APTM100A23SCTG 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
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