- 您現在的位置：買賣IC網 > PDF目錄51276 > APTM100DA18CT1G (MICROSEMI POWER PRODUCTS GROUP) 40 A, 1000 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | APTM100DA18CT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 1000 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 199K |
| 代理商： | APTM100DA18CT1G |
APTM100DA18CT1G
APT
M
100DA18CT
1G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
1 – 5
11
CR1
Q2
10
9
12
NTC
12
3
4
6
5
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
40
ID
Continuous Drain Current
Tc = 80°C
30
IDM
Pulsed Drain current
260
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
216
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
657
W
IAR
Avalanche current (repetitive and non repetitive)
33
A
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 8 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Boost chopper
MOSFET + SiC chopper diode
Power Module
VDSS = 1000V
RDSon = 180mΩ typ @ Tj = 25°C
ID = 40A @ Tc = 25°C
相關PDF資料 |
PDF描述 |
|---|---|
| APTM100DA18T1G | 40 A, 1000 V, 0.216 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H35FT3 | 22 A, 1000 V, 0.42 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H35FT3 | 22 A, 1000 V, 0.42 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H45FT3 | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H45FT3 | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTM100DA18T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper MOSFET Power Module |
| APTM100DA18T1G | 功能描述:MOSFET N-CH 1000V 40A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA18TG | 功能描述:MOSFET N-CH 1000V 43A SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA33T1G | 功能描述:MOSFET N-CH 1000V 23A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA40T1G | 功能描述:MOSFET N-CH 1000V 20A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
發布緊急采購，3分鐘左右您將得到回復。