- 您現在的位置：買賣IC網 > PDF目錄36739 > APTM100DA18T (MICROSEMI POWER PRODUCTS GROUP) 43 A, 1000 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | APTM100DA18T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 1000 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 312K |
| 代理商： | APTM100DA18T |
APTM100DA18T
AP
T
M
10
0DA1
8T
–R
ev
1
J
une
,2005
APT website – http://www.advancedpower.com
1 – 6
CR1
VBUS
NTC2
0/VBUS
VBUS SENSE
G2
S2
NTC1
Q2
OUT
VBUS
OUT
NTC2
NTC1
0/VBUS
S2
G2
VBUS
SENSE
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
43
ID
Continuous Drain Current
Tc = 80°C
33
IDM
Pulsed Drain current
172
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
215
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 180m typ @ Tj = 25°C
ID = 43A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Boost chopper
MOSFET Power Module
相關PDF資料 |
PDF描述 |
|---|---|
| APTM100DA33T1G | 23 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DA40T1G | 20 A, 1000 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DAM90 | 78 A, 1000 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DAM90 | 78 A, 1000 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM100DDA35T3 | 22 A, 1000 V, 0.35 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTM100DA18T1G | 功能描述:MOSFET N-CH 1000V 40A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA18TG | 功能描述:MOSFET N-CH 1000V 43A SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA33T1G | 功能描述:MOSFET N-CH 1000V 23A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DA40T1G | 功能描述:MOSFET N-CH 1000V 20A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM100DAM90 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper MOSFET Power Module |
發布緊急采購，3分鐘左右您將得到回復。