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參數資料
型號: APTM100DDA35T3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 22 A, 1000 V, 0.35 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-25
文件頁數: 1/6頁
文件大小: 319K
代理商: APTM100DDA35T3
APTM100DDA35T3
A
P
T
M
100D
D
A
35T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
1 – 6
14
13
Q1
Q2
23
8
22
7
CR1
CR2
30
29
32
4
26
3
27
31
16
15
R1
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
22
ID
Continuous Drain Current
Tc = 80°C
17
IDM
Pulsed Drain current
88
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
350
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 350m max @ Tj = 25°C
ID = 22A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
Dual Boost chopper
MOSFET Power Module
相關PDF資料
PDF描述
APTM100DSK35T3 22 A, 1000 V, 0.35 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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參數描述
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