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參數資料
型號: APTM100SK18T
元件分類: JFETs
英文描述: 43 A, 1000 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-12
文件頁數: 1/6頁
文件大?。?/td> 314K
代理商: APTM100SK18T
APTM100SK18T
A
P
T
M
100S
K
18T
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
Q1
VBUS
OUT
NTC2
G1
0/VBU S
0/VBU S SENSE
NTC1
S1
VBUS
OUT
NTC2
NTC1
S1
0/VBUS
SENSE
0/VBUS
SENSE
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
43
ID
Continuous Drain Current
Tc = 80°C
33
IDM
Pulsed Drain current
172
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
180
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 180m max @ Tj = 25°C
ID = 43A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Buck chopper
MOSFET Power Module
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