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參數資料
| 型號： | APTM100SK33T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 1000 V, 0.396 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 4/5頁 |
| 文件大?。?/td> | 146K |
| 代理商： | APTM100SK33T1G |
APTM100SK33T1G
APT
M
100SK33T
1G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
4 – 5
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
VGS=10V
Low Voltage Output Characteristics
4.5V
5V
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
TJ=125°C
VGS=6, 7, 8 &9V
Normalized RDSon vs. Temperature
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
on
,
Drai
n
to
S
o
urce
ON
re
si
stan
ce
VGS=10V
ID=18A
Transfert Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
12
3
456
VGS, Gate to Source Voltage (V)
I D
,Drain
Cu
rrent
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
VDS=200V
VDS=500V
VDS=800V
0
2
4
6
8
10
12
0
40
80
120 160 200 240 280 320
Gate Charge (nC)
V
GS
,G
a
te
t
o
Sour
c
e
V
o
lt
a
g
e
ID=18A
TJ=25°C
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