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參數(shù)資料
| 型號(hào)： | APTM100UM60F-ALN |
| 元件分類： | JFETs |
| 英文描述： | 129 A, 1000 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 300K |
| 代理商： | APTM100UM60F-ALN |
APTM100UM60F-AlN
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J
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2004
APT website – http://www.advancedpower.com
1 – 6
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
129
ID
Continuous Drain Current
Tc = 80°C
97
IDM
Pulsed Drain current
516
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
60
m
PD
Maximum Power Dissipation
Tc = 25°C
2272
W
IAR
Avalanche current (repetitive and non repetitive)
25
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1000V
RDSon = 60m max @ Tj = 25°C
ID = 129A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single Switch
MOSFET Power Module
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