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參數(shù)資料
| 型號： | APTM10DAM02 |
| 元件分類： | JFETs |
| 英文描述： | 495 A, 100 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 297K |
| 代理商： | APTM10DAM02 |
APTM10DAM02
A
P
T
M
10D
A
M
02–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 - 6
G2
S2
VBUS
0/VBUS
CR1
OUT
Q2
OUT
0/VBUS
VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
495
ID
Continuous Drain Current
Tc = 80°C
370
IDM
Pulsed Drain current
1900
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
2.5
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 2.25m typ @ Tj = 25°C
ID = 495A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Boost chopper
MOSFET Power Module
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| APTM10DAM02G | 功能描述:MOSFET N-CH 100V 495A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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