欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): APTM10HM09FT3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-25
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 315K
代理商: APTM10HM09FT3
APTM10HM09FT3
A
P
T
M
10H
M
09F
T
3–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
1 – 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
139
ID
Continuous Drain Current
Tc = 80°C
100 *
IDM
Pulsed Drain current
430
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
9.5
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 100V
RDSon = 9m typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS V FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
MOSFET Power Module
相關(guān)PDF資料
PDF描述
APTM10HM09FT 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM10HM09FT 139 A, 100 V, 0.0095 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM10HM19FT3 70 A, 100 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM10HM19FT3 70 A, 100 V, 0.02 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM10SKM02 495 A, 100 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTM10HM09FT3G 功能描述:MOSFET MODULE FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTM10HM09FTG 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTM10HM19FT3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module
APTM10HM19FT3G 功能描述:MOSFET MOD FULL BRIDGE 100V SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTM10SKM02 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper MOSFET Power Module
主站蜘蛛池模板: 丰县| 吉安市| 历史| 宽城| 固阳县| 勃利县| 建阳市| 兴文县| 山丹县| 岑巩县| 石渠县| 招远市| 怀宁县| 宝坻区| 延安市| 新泰市| 阿鲁科尔沁旗| 龙胜| 宣汉县| 梅河口市| 波密县| 海阳市| 正安县| 定远县| 百色市| 敖汉旗| 大庆市| 安康市| 曲阳县| 含山县| 鲁山县| 叙永县| 阿拉尔市| 庆安县| 瓦房店市| 炎陵县| 唐河县| 建湖县| 宁国市| 太仆寺旗| 嘉善县|