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參數(shù)資料
型號(hào): APTM120H57FT
元件分類: JFETs
英文描述: 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-14
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 315K
代理商: APTM120H57FT
APTM120H57FT
A
P
T
M
120H
57F
T
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
S3
G3
S4
G4
NTC2
S1
G1
OUT2
OUT1
VBUS
Q1
Q2
S2
G2
0/VBUS
NTC1
Q3
Q4
OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
17
ID
Continuous Drain Current
Tc = 80°C
13
IDM
Pulsed Drain current
68
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
570
m
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
22
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 570m max @ Tj = 25°C
ID = 17A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Full - Bridge
MOSFET Power Module
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