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參數(shù)資料
型號(hào): APTM120U100D-A1N
元件分類(lèi): JFETs
英文描述: 116 A, 1200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-4
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 310K
代理商: APTM120U100D-A1N
APTM120U100D-AlN
A
P
T
M
120U
100D
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
D
S
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
116
ID
Continuous Drain Current
Tc = 80°C
86
IDM
Pulsed Drain current
464
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
100
m
PD
Maximum Power Dissipation
Tc = 25°C
3290
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ
VDSS = 1200V
RDSon = 100m max @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
Zero Current Switching resonant mode
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
with Series diodes
MOSFET Power Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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