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參數(shù)資料
型號: APTM120U10SA
元件分類: JFETs
英文描述: 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-4
文件頁數(shù): 1/6頁
文件大小: 293K
代理商: APTM120U10SA
APTM120U10SA
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2005
APT website – http://www.advancedpower.com
1 – 6
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
116
ID
Continuous Drain Current
Tc = 80°C
86
IDM
Pulsed Drain current
464
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
120
m
PD
Maximum Power Dissipation
Tc = 25°C
3290
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ
VDSS = 1200V
RDSon = 100m typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for MOSFET improved thermal
performance
Benefits
Outstanding performance at
high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
Series & parallel diodes
MOSFET Power Module
相關(guān)PDF資料
PDF描述
APTM120U10SA 116 A, 1200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
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APTM20AM05F 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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