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參數資料
| 型號： | APTM20HM10F |
| 元件分類： | JFETs |
| 英文描述： | 175 A, 200 V, 0.01 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 294K |
| 代理商： | APTM20HM10F |
APTM20HM10F
A
PT
M
20H
M
10F
–R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 6
S4
G4
G2
S2
VBUS
0/VBUS
S1
G1
S3
OUT1
OUT2
G3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
175
ID
Continuous Drain Current
Tc = 80°C
131
IDM
Pulsed Drain current
700
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
10
m
W
PD
Maximum Power Dissipation
Tc = 25°C
694
W
IAR
Avalanche current (repetitive and non repetitive)
89
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 200V
RDSon = 10m
W max @ Tj = 25°C
ID = 175A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Full - Bridge
MOSFET Power Module
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相關代理商/技術參數 |
參數描述 |
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| APTM20HM10FG | 功能描述:MOSFET MODULE FULL BRIDGE SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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| APTM20HM20FTG | 功能描述:MOSFET MODULE FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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