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參數資料
| 型號： | APTM50AM19STG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-9 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 305K |
| 代理商： | APTM50AM19STG |
APTM50AM19ST
A
PT
M
50A
M
19S
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 7
NTC2
OUT
VBUS
NTC1
0/VBUS
Q1
G1
Q2
S1
S2
G2
0/VBUS
VBUS
NT
C
2
G2
S2
G1
S1
NT
C
1
OUT
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
170
ID
Continuous Drain Current
Tc = 80°C
125
IDM
Pulsed Drain current
360
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
19
m
W
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 19m
W max @ Tj = 25°C
ID = 170A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
Phase leg
Schottky Series &
parallel diodes
MOSFET Power Module
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| APTM50AM19ST | 170 A, 500 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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