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參數(shù)資料
| 型號(hào)： | APTM50DUM25T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 149 A, 500 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-15 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 193K |
| 代理商： | APTM50DUM25T |
APTM50DUM25T
A
PT
M
50
D
U
M
25
T
–
R
ev
0
Ju
ne
,2
00
3
APT website – http://www.advancedpower.com
1 - 3
DK1
NC
SK1
NC
G2
SK2
NC
DK2
G1
NTC2
NTC1
NC
S
1
D1
D2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
149
ID
Continuous Drain Current
Tc = 80°C
111
IDM
Pulsed Drain current
300
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
25
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
149
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 500V
RDSon = 25m
max @ Tj = 25°C
ID = 149A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS V MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Kelvin Drain for VDS monitoring
Very low stray inductance
- Symmetrical design
- M5 power connectors
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
Dual common source
MOSFET Power Module
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| APTM50DUM25T | 149 A, 500 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM50H15FT1G | 25 A, 500 V, 0.156 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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