欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: APTM50HM35FG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 99 A, 500 V, 0.039 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP6, 12 PIN
文件頁數(shù): 1/6頁
文件大小: 287K
代理商: APTM50HM35FG
APTM50HM35FG
A
P
T
M
50H
M
35F
G
R
ev
2
J
ul
y,
2006
www.microsemi.com
1 – 6
S4
G4
S3
Q3
G3
G1
Q1
Q4
0/VBUS
VBUS
OU
T2
OU
T1
G2
Q2
S2
S1
S4
G4
G2
S2
VBUS
0/VBUS
S1
G1
S3
OUT1
OUT2
G3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
99
ID
Continuous Drain Current
Tc = 80°C
74
IDM
Pulsed Drain current
396
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
39
m
PD
Maximum Power Dissipation
Tc = 25°C
781
W
IAR
Avalanche current (repetitive and non repetitive)
51
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 500V
RDSon = 35m typ @ Tj = 25°C
ID = 99A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7 FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Full - Bridge
MOSFET Power Module
相關(guān)PDF資料
PDF描述
APTM50HM38F 90 A, 500 V, 0.038 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM50HM38F 90 A, 500 V, 0.038 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AQ-24 2000 MHz - 4000 MHz, 0 deg - 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR
AQ-26 2000 MHz - 6000 MHz, 0 deg - 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR
AQ-42 4000 MHz - 12000 MHz, 0 deg - 360 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTM50HM38F 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module
APTM50HM38FG 功能描述:MOSFET MODULE FULL BRIDGE SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APTM50HM65FT 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module
APTM50HM65FT3 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module
APTM50HM65FT3G 功能描述:MOSFET MOD FULL BRIDGE 500V SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
主站蜘蛛池模板: 兴业县| 荆门市| 龙川县| 云龙县| 安化县| 本溪| 同心县| 镇原县| 阜宁县| 鄂温| 玉门市| 射洪县| 通化市| 城步| 肇庆市| 七台河市| 五家渠市| 大渡口区| 晋江市| 时尚| 固镇县| 三台县| 同仁县| 温宿县| 东至县| 蒙城县| 盐津县| 林西县| 正镶白旗| 中牟县| 贵港市| 礼泉县| 卓资县| 扎赉特旗| 大城县| 吉木乃县| 乐陵市| 广汉市| 伊金霍洛旗| 萍乡市| 景洪市|