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參數(shù)資料
型號: APTML100U60R020T1AG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 20 A, 1000 V, 0.72 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù): 1/3頁
文件大小: 96K
代理商: APTML100U60R020T1AG
APTML100U60R020T1AG
APT
M
L
100U60R
020T
1AG
Rev
1
M
arch,
2010
www.microsemi.com
1 – 3
Pins 1/2 ; 5/6 must be shorted together
Absolute maximum ratings
In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
20
ID
Continuous Drain Current
Tc = 80°C
14
IDM
Pulsed Drain current
74
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
720
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
520
W
Application
Electronic load dedicated to power supplies and
battery discharge testing
Features
Linear MOSFET
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
easy series and parallels combinations for power and
voltage improvements
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Linear MOSFET
Power Module
VDSS = 1000V
RDSon = 600mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
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