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參數資料
型號: AQV414EHAZ
廠商: PANASONIC CORP
元件分類: 繼電器,輸入/輸出模塊
英文描述: Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed)
中文描述: TRANSISTOR OUTPUT SOLID STATE RELAY, 5000 V ISOLATION-MAX
封裝: SMD, DIP-6
文件頁數: 1/4頁
文件大小: 885K
代理商: AQV414EHAZ
GU-E PhotoMOS (AQV414E, AQV41EH)
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the SMD terminal shape indicator “A” and the package type indicator “X” and “Z” are omitted from the seal.
General use and
economy type.
DIP (1 Form B) 6-pin type.
Reinforced insulation
5,000V type.
GU-E PhotoMOS
(AQV414E,
AQV41EH)
Type
I/O isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube
Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC
type
1,500 V AC
(Standard)
400 V 120 mA
AQV414E
AQV414EA
AQV414EAX
AQV414EAZ
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
5,000 V AC
(Reinforced)
60 V
550 mA
AQV412EH
AQV412EHA AQV412EHAX
AQV412EHAZ
350 V 130 mA
AQV410EH
AQV410EHA AQV410EHAX
AQV410EHAZ
400 V 120 mA
AQV414EH
AQV414EHA AQV414EHAX
AQV414EHAZ
TESTING
(Reinforced type)
(Standard type)
(AQV410EH, 414EH) (AQV410EH, 414EH)
VDE
(AQV412EH)
VDE
mm inch
FEATURES
1. 60V type couples high capacity
(0.55A) with low on-resistance (1
).
Item
GU-E
(1 Form B type) type
Part No.
AQV410EH AQV412EH
Load voltage
350V
60V
Continuous
load current
0.13A
0.55A
ON resistance
(typ.)
18
1
8.8
.346
6.4
.252
3.6
.142
8.8
.346
6.4
.252
3.9
.154
1
2
3
6
5
4
2. This is the low-cost version
PhotoMOS 1 Form B output type relay.
Compared to the previous GU
PhotoMOS 1 Form B type relay, the
attainment of an economical price that is
approximately 22% lower will further
broaden its market.
3. Normally closed type (2 Form B) is
low on-resistance.
(All AQ4 PhotoMOS are Form B
types. And also the Form A types have
a low on-resistance.)
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
;;
;
;;
;;;;
;;
;
Source electrode
N–
N+
P+
N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
5. High sensitivity, low ON resistance
Can control a maximum 0.13 A load
current with a 5 mA input current. Low
ON resistance of 18 (AQV410EH).
Stable operation because there are no
metallic contact parts.
6. Low-level off-state leakage current
The SSR has an off-state leakage current
of several milliamperes, whereas the
PhotoMOS relay has typ. 100 pA even
with the rated load voltage of 400 V
(AQV414E).
7. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
TYPICAL APPLICATIONS
Power supply
Measuring equipment
Security equipment
Telephone equipment
Sensors
NEW
All Rights Reserved COPYRIGHT Matsushita Electric Works, Ltd.
相關PDF資料
PDF描述
AQV414 Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed)
AQV414A Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed)
AQV414AX Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed)
AQV414AZ Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed)
AQW210 Solid State Relay (with MOSFET Output) 8pin DIP (Form A, Normally-Open)
相關代理商/技術參數
參數描述
AQV414EHAZJ 制造商:Panasonic Electric Works 功能描述:
AQV414EHJ 制造商:Panasonic Electric Works 功能描述:
AQV414EJ 制造商:Panasonic Electric Works 功能描述:
AQV414H 功能描述:固態(tài)繼電器-PCB安裝 RELAY OPTO AC/DC 400V 120MA 6DIP RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負載電壓額定值:40 V 負載電流額定值:120 mA 觸點形式:1 Form A (SPST-NO) 輸出設備:MOSFET 封裝 / 箱體:USOP-4 安裝風格:SMD/SMT
AQV414HA 功能描述:固態(tài)繼電器-PCB安裝 RELAY OPTO AC/DC 400V 120MA 6SMD RoHS:否 制造商:Omron Electronics 控制電壓范圍: 負載電壓額定值:40 V 負載電流額定值:120 mA 觸點形式:1 Form A (SPST-NO) 輸出設備:MOSFET 封裝 / 箱體:USOP-4 安裝風格:SMD/SMT
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