- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51278 > AR1F2Q 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號： | AR1F2Q |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 116K |
| 代理商： | AR1F2Q |
1998
Document No. D16172EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
High current drives such as IC output and actuator available
On-chip bias resistor
Low power consumption during drive
AR1 SERIES LISTS
Products
R1 (K
)R2 (K)
AR1A3M
1.0
AR1F3P
2.2
10
AR1L3N
4.7
10
AR1A4M
10
AR1L2Q
0.47
4.7
AR1F2Q
0.22
2.2
AR1A4A
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (Pulse)
IC(pulse) *
2.0
A
Base current (DC)
IB(DC)
0.02
A
Total power dissipation
PT
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
Electrode Connection
1. Emitter
EIAJ
: SC-43B
2. Collector JEDEC: TO-92
3. Base
IEC
: PA33
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AR1F3P-AZ | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AR1F2Q-AZ | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AR1L2Q-AZ | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AR1A4A-AZ | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AR1F2Q | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AR1F3P | 制造商:NEC 制造商全稱:NEC 功能描述:on-chip resistor PNP silicon epitaxial transistor |
| AR1F3P(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| AR1KL.25 | 功能描述:精度電位計 1-13/16" 1K OHM 10 TURN RoHS:否 制造商:Bourns 產(chǎn)品:Precision Potentiometer 安裝風(fēng)格:Panel 線性: 錐度: 轉(zhuǎn)數(shù):3 元件類型:Wirewound 軸類型:Slotted 電阻:2 kOhms 端接類型:Solder Lug 電壓額定值: 容差:5 % |
| AR1KL.25CT | 制造商:BI Technologies (TT electronics) 功能描述:AR1KL.25CT |
| AR1KL.25LF | 制造商:TT Electronics / BI Technologies 功能描述:POTENTIOMETER 1K 5W 制造商:TT Electronics / BI Technologies 功能描述:POTENTIOMETER, 1K 5W 制造商:TT Electronics / BI Technologies 功能描述:POT, WIREWOUND, 1KOHM, 3%, 5W; Track Resistance:1kohm; Track Taper:Linear; No. of Turns:10; Shaft Diameter:6.34mm; Shaft Length:20.6mm; Resistance Tolerance: 3%; Voltage Rating:1kV; Power Rating:5W; Potentiometer Mounting:Panel ;RoHS Compliant: Yes 制造商:TT Electronics / BI Technologies 功能描述:POTENTIOMETER, 1K 5W; Track Resistance:1kohm; Track Taper:Linear; Shaft Diameter:6.34mm; Shaft Length - Metric:0mm; Resistance Tolerance: 1%; Voltage Rating:1kV; Power Rating:5W; Potentiometer Mounting:Panel; No. of Gangs:3; ;RoHS Compliant: Yes |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。