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參數(shù)資料
| 型號(hào)： | ARF445 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型射頻功率MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | ARF445 |
TO-247
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
0
D
G
S
ARF444 300W 300V 13.56MHz
ARF445 300W 300V 13.56MHz
THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445.
)
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific,
commercial, medical and industrial RF power amplifier applications.
Specified 300 Volt, 13.56 MHz Characteristics:
Output Power = 300 Watts.
Gain = 18.7dB (Typ.)
Efficiency = 83% (Typ.)
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Voltage
1
(I
D
(ON) = 3.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
900
7
250
1000
±
100
4
5.7
2
5
UNIT
Volts
μ
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θ
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25
°
C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF444/445
900
900
6.5
±
30
208
0.60
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°
C/W
°
C
RF OPERATION 1-15MHz
POWER MOS IV
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 5792 1515
FAX: (33) 5 5647 9761
APT Website - http://www.advancedpower.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ARF446 | N-CHANNEL ENHANCEMENT MODE |
| ARF447 | N-CHANNEL ENHANCEMENT MODE |
| ARF448 | N-CHANNEL ENHANCEMENT MODE |
| ARF448A | ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% |
| ARF448B | N-CHANNEL ENHANCEMENT MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF446 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF446_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF446G | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 900V 6.5A TO247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF447 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF447G | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 900V 6.5A TO247 制造商:Microsemi Corporation 功能描述:ARF447 Series N-Channel 140 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
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