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參數資料
| 型號： | ARF449B |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強模式 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 58K |
| 代理商： | ARF449B |
0
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Voltage
1
(I
D
(ON) = 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
450
4
25
250
±
100
3
5.8
2
5
UNIT
Volts
μ
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θ
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25
°
C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF449A/449B
450
450
9
±
30
165
0.76
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°
C/W
°
C
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
150V
150W
120MHz
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
Specified 150 Volt, 81.36 MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class C)
Efficiency = 75%
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
TO-247
ARF449A
ARF449B
G
D
S
Common
Source
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 5792 1515
FAX: (33) 5 5647 9761
APT Website - http://www.advancedpower.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ARF449BG | 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 450V 9A 3-Pin(3+Tab) TO-247 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 450V TO-247 制造商:Microsemi Corporation 功能描述:ARF449B Series N-Channel 90 W 120 MHz Flange Mount RF Power Mosfet - TO-247-3 |
| ARF450 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF460A | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE |
| ARF460AG | 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:- 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ARF460B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE |
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