- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36744 > ARF463AP1 (MICROSEMI POWER PRODUCTS GROUP) VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | ARF463AP1 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 260K |
| 代理商： | ARF463AP1 |
050-4924
Rev
B
3-2006
TO-247
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 A)
On State Drain Voltage 1 (I
D(ON) = 4.5A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 4.5A)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
MIN
TYP
MAX
500
5.0
25
250
±100
23
4
35
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF463A_BP1(G)
500
9
±30
180
0.70
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been
optimized for both linear and high efficiency classes of operation.
Specified 125 Volt, 81.36MHz Characteristics:
Output Power = 100 Watts.
Gain = 15dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ARF463AP1
ARF463BP1
ARF463AP1G* ARF463BP1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
125V 100
W 100MHz
G
D
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ARF463B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF463A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF466A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF463AP1G | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF463B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
| ARF463BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 500V 9A TO-247 制造商:Microsemi Corporation 功能描述:ARF463B Series 500 V 81.36 MHz SMT N-Channel RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF463BP1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF463BP1G | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 500V 9A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。