- 您現在的位置：買賣IC網 > PDF目錄366583 > ARF464A (Advanced Power Technology Ltd.) RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE PDF資料下載
參數資料
| 型號： | ARF464A |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | 射頻功率MOSFET N溝道增強模式 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 102K |
| 代理商： | ARF464A |
0
Lead Temperature: 0.063" from Case for 10 Sec.
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 μA)
On State Drain Voltage
1
(I
D
(ON) = 7.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 7.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
200
3.0
25
250
±100
2
3.5
5
3
5
UNIT
Volts
μA
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
q
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
ARF464A/B
200
200
15
±30
180
0.70
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE
65V
100W
100MHz
The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
optimized for both linear and high efficiency classes of operation.
Specified 65 Volt, 81.36 MHz Characteristics:
Output Power = 100 Watts.
Gain = 13dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
TO-247
ARF464A
ARF464B
G
D
S
Common
Source
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 57 9215 15
FAX: (33)556 4797 61
相關PDF資料 |
PDF描述 |
|---|---|
| ARF464B | RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| ARF526 | FAST RECOVERY DIODE |
| ARF526S16 | FAST RECOVERY DIODE |
| ARF565S32 | FAST RECOVERY DIODE |
| ARF565 | FAST RECOVERY DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ARF464B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| ARF465A | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF465AG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi ARF465AG Discrete Misc 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1200V 6A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF465B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFETs |
| ARF465BG | 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 1200V 6A 3-Pin(3+Tab) TO-247 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi ARF465BG Discrete Misc 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1200V 6A TO-247 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
發布緊急采購，3分鐘左右您將得到回復。