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參數(shù)資料
| 型號： | ARF476FL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 183K |
| 代理商： | ARF476FL |
050-4931
B
6-2007
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (each device)
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
g
fs1
/
g
fs2
V
GS(TH)
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage 1 (I
D(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 15V, I
D
= 5A)
Forward Transconductance Match Ratio (V
DS
= 15V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
Gate Threshold Voltage Match (V
DS
= V
GS
, I
D
= 200mA)
MIN
TYP
MAX
500
2.9
4
100
500
±100
3
3.6
0.9
1.1
2
3.3
4
0.2
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
(each device)
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF476FL
500
10
±30
910
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N - CHANNEL PUSH - PULL PAIR
165V
450W 150MHz
The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
Specified 150 Volt, 128 MHz Characteristics:
Output Power = 900 Watts Peak
Gain = 15dB (Class AB)
Efficiency = 50% min
Extended Flange - 3mm Creep Distance.
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
Low Thermal Resistance.
ARF476FL
Common Source
Push-Pull Pair
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJHS
Characteristic
Junction to Case
Junction to Sink (Use High Efficiency Thermal Grease and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.15
0.165
0.30
0.33
UNIT
°C/W
G
D
S
D
Microsemi Website - http://www.microsemi.com
ARF476FL
D
GG
S
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| ARF500 12R J | 功能描述:RES CHAS MNT 12 OHM 5% 500W 制造商:ohmite 系列:ARF 包裝:散裝 零件狀態(tài):在售 電阻值:12 Ohms 容差:±5% 功率（W）:500W 成分:繞線 溫度系數(shù):±150ppm/°C 工作溫度:0°C ~ 200°C 特性:脈沖耐受 涂層，外殼類型:鋁 安裝特性:螺釘孔 大小/尺寸:10.630" 長 x 3.110" 寬 (270.00mm x 79.00mm) 高度 - 安裝（最大值）:0.728"（18.50mm） 引線形式:導(dǎo)線引線 封裝/外殼:矩形外殼 故障率:- 標(biāo)準(zhǔn)包裝:1 |
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