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參數(shù)資料
| 型號： | ARF520 |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 0.500 INCH, CERAMIC, SOE, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | ARF520 |
050-5930
Rev
A
6-2003
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
165 V 150 W 100 MHz
The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power
amplifiers up to 100 MHz.
Specified 125 Volt, 81 MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efficiency = 50%
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
Industry standard package
Low Vth thermal coefficient
ARF520
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
APT
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage 1 (I
D(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
500
4
25
250
±100
46
35
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF520
500
10
±30
250
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
°C
V
GS(TH)
THERMAL CHARACTERISTICS
Symbol
RθJC
RθCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.7
0.1
UNIT
°C/W
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