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參數資料
| 型號： | AS6VA5128-BC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| 中文描述： | 2.7V至3.3V為512k × 8 Intelliwatt低功耗CMOS SRAM的 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 151K |
| 代理商： | AS6VA5128-BC |
2
ALLIANCE SEMICONDUCTOR
10/6/00
AS6VA5128
Functional description
The AS6VA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as
524,288 words × 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing
are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 55 ns are ideal for low-power applications. Active high and low chip
selects (CS) permit easy memory expansion with multiple-bank memory systems.
When CS is high, the device enters standby mode: the AS6VA5128 is guaranteed not to exceed 66
μ
W power consumption
at 3.3V and 55ns. The device also returns data when V
CC
is reduced to 1.5V for even lower power consumption.
A write cycle is accomplished by asserting write enable (WE) and chip select (CS) low. Data on the input pins I/O1–I/O8 is
written on the rising edge of WE (write cycle 1) or CS (write cycle 2). To avoid bus contention, external devices should drive
I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE), chip select (CS), with write enable (WE) High. The chip
drives I/O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or
write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are CMOS-compatible, and operation is from a single 2.7V to 3.3V supply. The device is
available in the JEDEC standard 36(48)-ball FBGA package.
Absolute maximum ratings
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
Key: X = Don’t care, L = Low, H = High.
Parameter
Device
Symbol
Min
Max
Unit
Voltage on V
CC
relative to V
SS
Voltage on any I/O pin relative to GND
Power dissipation
V
tIN
V
tI/O
P
D
T
stg
T
bias
I
OUT
–0.5
V
CC
+ 0.5
V
–0.5
–
V
W
°
C
°
C
mA
1.0
Storage temperature (plastic)
–65
+150
Temperature with V
CC
applied
DC output current (low)
–55
–
+125
20
CS
WE
OE
Supply Current
I/O1–I/O8
Mode
H
L
X
X
X
X
I
SB
I
SB
I
CC
I
CC
I
CC
High Z
High Z
Standby (I
SB
)
Standby (I
SB
)
Output disable (I
CC
)
Read (I
CC
)
Write (I
CC
)
L
H
H
High Z
L
L
H
L
L
X
D
OUT
D
IN
相關PDF資料 |
PDF描述 |
|---|---|
| AS6VA5128-BI | 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| AS6VA5128 | 2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 到 3.3V 512K × 8 Intelliwatt 低功耗 CMOS 靜態RAM) |
| AS6WA25616 | 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-BI | 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-TC | 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AS6VA5128-BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM |
| AS6WA25616 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
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