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參數資料
型號: AS6VA5128
廠商: Alliance Semiconductor Corporation
英文描述: 2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 到 3.3V 512K × 8 Intelliwatt 低功耗 CMOS 靜態RAM)
中文描述: 2.7V至3.3V為512k × 8 Intelliwatt低功耗CMOS SRAM的(2.7到3.3為512k × 8 Intelliwatt低功耗的CMOS靜態RAM)的
文件頁數: 5/9頁
文件大小: 151K
代理商: AS6VA5128
AS6VA5128
10/6/00
ALLIANCE SEMICONDUCTOR
5
Write cycle (over the operating range)
11
Parameter
Write cycle time
Write waveform 1 (WE controlled)
10,11
Write waveform 2 (CS controlled)
10,11
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Min
55
Max
Unit
ns
Notes
Chip select to write end
40
ns
12
Address setup to write end
Address setup time
40
0
ns
ns
12
Write pulse width
35
ns
Address hold from end of write
Data valid to write end
0
ns
ns
25
Data hold time
0
ns
4, 5
Write enable to output in high Z
Output active from write end
0
5
20
ns
ns
4, 5
4, 5
t
AW
t
AH
t
WC
Address
WE
D
OUT
t
DH
t
OW
t
DW
t
WZ
t
WP
t
AS
Data valid
D
IN
t
AW
Address
CS
WE
D
OUT
t
CW
t
WP
t
DW
Data valid
t
DH
t
AH
t
WZ
t
WC
t
AS
D
IN
相關PDF資料
PDF描述
AS6WA25616 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable
AS6WA25616-BI 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable
AS6WA25616-TC 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable
AS6WA25616-TI 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable
AS6WA25616-BC 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable
相關代理商/技術參數
參數描述
AS6VA5128-BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
AS6VA5128-BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
AS6WA25616 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable
AS6WA25616-BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable
AS6WA25616-BI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable
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