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參數(shù)資料
| 型號(hào)： | AS6WA25616 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| 中文描述： | 3.0V至3.6V 256K？6 IntelliwattTM同一個(gè)芯片中低功耗CMOS SRAM的啟用 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 215K |
| 代理商： | AS6WA25616 |
AS6WA25616
7/9/02; v.1.3
Alliance Semiconductor
P. 6 of 9
Data retention characteristics (over the operating range)
Parameter
V
CC
for data retention
Data retention current
Chip deselect to data retention time
Operation recovery time
Data retention waveform
AC test loads and waveforms
Notes
1
2
3
4
5
6
7
8
9
10 CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A.
13 1.5V data retention applies to commercial and industrial temperature range operations.
14 C = 30pF, except at high Z and low Z parameters, where C = 5pF.
During V
CC
power-up, a pull-up resistor to V
CC
on CS is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Condtions
.
t
CLZ
and t
CHZ
are specified with C
L
= 5pF as in Figure C. Transition is measured
±
500 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is HIGH for read cycle.
CS and OE are LOW for read cycle.
Address valid prior to or coincident with CS transition LOW.
All read cycle timings are referenced from the last valid address to the first transitioning address.
Symbol
V
DR
I
CCDR
t
CDR
t
R
Test conditions
V
CC
= 1.5V
CS
≥
V
CC
– 0.1V or
UB = LB = > V
CC
– 0.1V
V
IN
≥
V
CC
– 0.1V or
V
IN
≤
0.1V
Min
1.5V
–
0
t
RC
Max
-
10
–
–
Unit
V
μ
A
ns
ns
Parameters
R1
R2
R
TH
V
TH
V
CC
= 3.6V
1523
1142
476
1.4V
Unit
Ohms
Ohms
Ohms
Volts
V
CC
CS
t
R
t
CDR
Data retention mode
V
CC
V
CC
V
DR
≥
1.5V
V
IH
V
IH
V
DR
V
CC
R1
R2
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
V
CC
R1
R2
OUTPUT
5 pF
ALL INPUT PULSES
(b)
10%
90%
10%
90%
GND
V
CC
Typ
< 5 ns
(c)
Thevenin equivalent:
OUTPUT
R
TH
V
TH
INCLUDING
JIG AND
SCOPE
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| AS6WA25616-TC | 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-TI | 3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS6WA25616-BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA25616-TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3.0V to 3.6V 256K X 6 IntelliwattTM low-power CMOS SRAM with one chip enable |
| AS6WA5128 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.0V to 3.6V 512K 】 8 Intelliwatt low-power CMOS SRAM |
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