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參數資料
| 型號： | AS7C31026A-20TC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 5V/3.3V 64K X 16 CMOS SRAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | 10.20 X 18.40 MM, TSOP2-44 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 148K |
| 代理商： | AS7C31026A-20TC |
January 2001
Advance Information
Copyright Alliance Semiconductor. All rights reserved.
AS7C1026A
AS7C31026A
5V/3.3V 64K X 16 CMOS SRAM
2/6/01; V0.9
Alliance Semiconductor
P. 1 of 9
Features
AS7C1026A (5V version)
AS7C31026A (3.3V version)
Industrial and commercial versions
Organization: 65,536 words × 16 bits
Center power and ground pins for low noise
High speed
- 10/12/15/20 ns address access time
- 3/3/4/5 ns output enable access time
Low power consumption: ACTIVE
- 660 mW (AS7C1026A) / max @ 10 ns
- 324 mW (AS7C31026A) / max @ 10 ns
Low power consumption: STANDBY
- 55 mW (AS7C1026A) / max CMOS I/O
- 36 mW (AS7C31026A) / max CMOS I/O
Latest 6T 0.25u CMOS technology
2.0V data retention
Easy memory expansion with CE, OE inputs
TTL-compatible, three-state I/O
JEDEC standard packaging
- 44-pin 400 mil SOJ
- 44-pin 400 mil TSOP II
- 48-ball 6 mm × 8 mm CSP mBGA
ESD protection
≥
2000 volts
Latch-up current
≥
200 mA
Logic block diagram
64K × 16
Array
OE
LB
CE
WE
Column decoder
R
A0
A1
A2
A3
A4
A5
A7
V
CC
GND
A
A
A
A
A
A
A
A
Control circuit
I/O0–I/O7
I/O8–I/O15
UB
I/O
buffer
A6
Pin arrangement
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O13
I/O12
GND
V
CC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
A0
CE
I/O0
I/O1
I/O2
I/O3
V
CC
GND
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
44-Pin SOJ, TSOP II (400 mil)
UB
LB
I/O15
I/O14
2
3
4
A3
A2
A1
1
A4
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
43
42
41
44
A6
A7
OE
A5
A
A
Selection guide
AS7C1026A-10
AS7C31026A-10
AS7C1026A-12
AS7C31026A-12
AS7C1026A-15
AS7C31026A-15
AS7C1026A-20
AS7C31026A-20
Unit
Maximum address access time
10
12
15
20
ns
Maximum output enable access time
3
3
4
5
ns
Maximum operating current
AS7C1026A
120
110
100
100
mA
AS7C31026A
90
80
80
80
mA
Maximum CMOS standby
current
AS7C1026A
10
10
10
15
mA
AS7C31026A
10
10
10
15
mA
48-CSP mini Ball-Grid-Array Package
1
2
A
LB
OE
B
I/O8
UB
C
I/O9
I/O10
D
V
SS
I/O11
E
V
DD
I/O12
F
I/O14
I/O13
A14
G I/O15
NC
H
NC
A8
3
A
0
A3
A5
NC
NC
4
A
1
A4
A6
A7
NC I/O4
A15 I/O5 I/O6
A13
WE
A10
A11
5
A
2
CE
I/O1 I/O2
I/O3
6
NC
I/O0
V
DD
V
SS
A12
A9
I/O7
NC
相關PDF資料 |
PDF描述 |
|---|---|
| AS7C1026A-10 | 5V/3.3V 64K X 16 CMOS SRAM |
| AS7C1026A-10BC | 5V/3.3V 64K X 16 CMOS SRAM |
| AS7C1026A-10JC | 5V/3.3V 64K X 16 CMOS SRAM |
| AS7C1026A-10JI | 5V/3.3V 64K X 16 CMOS SRAM |
| AS7C1026A-10TC | 5V/3.3V 64K X 16 CMOS SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AS7C31026A-20TI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V/3.3V 64K X 16 CMOS SRAM |
| AS7C31026B | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3 V 64K X 16 CMOS SRAM |
| AS7C31026B-10JC | 制造商:Alliance Memory Inc 功能描述:AS7C31026B Series 1-Mbit (64 K x 16) 3.3 V 10 ns CMOS Static RAM - SOJ-44 |
| AS7C31026B-10JCN | 功能描述:靜態隨機存取存儲器 1M, 3.3V, 10ns, FAST 64K x 16 Asynch 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| AS7C31026B-10JCNTR | 功能描述:靜態隨機存取存儲器 1M, 3.3V, 10ns, FAST 64K x 16 Asynch 靜態隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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