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參數(shù)資料
| 型號(hào)： | ASI10473 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 15K |
| 代理商： | ASI10473 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 2.0 mA
45
V
BVCEO
IC = 20 mA
22
V
BVEBO
IE = 2.0 mA
3.5
V
hFE
VCE = 5.0 V
IC = 200 mA
20
---
Cob
VCB = 28 V
f = 1.0 MHz
5.0
pF
Pg
P1db
VCE = 15 V
IC = 250 mA
f = 2.1 GHz
1.5
7.8
1.7
dB
W
NPN SILICON RF POWER TRANSISTOR
LTE21015R
DESCRIPTION:
The
LTE21015R is Designed for
Class A Common Emitter Amplifier
Applications to 2.3 GHz.
FEATURES INCLUDE:
Replacement for Philips LTE21015R
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
IC
800 mA
VCB
45 V
PDISS
6.0 W @ TC = 25
OC
TJ
-55
OC to +200 OC
TSTG
-55
OC to +200 OC
θθ
JC
15
OC/W
PACKAGE STYLE .250 2L FLG
1 = BASE
2 = COLLECTOR
3 = EMITTER
Inches
Millimeters
Dim:
Min
Max
Min
Max
A
0.790
0.810
20.07
20.57
B
0.240
0.260
6.10
6.60
C
0.144
0.170
3.66
4.31
D
0.115
0.125
2.93
3.17
E
0.055
0.065
1.40
1.65
F
0.045
0.055
1.15
1.39
H
0.115
0.135
2.93
3.42
J
0.003
0.006
0.08
0.15
K
0.225
0.275
5.72
6.98
N
0.220
0.240
5.59
6.09
Q
0.125
0.135
3.18
3.42
U
0.552
0.572
14.03
14.52
ORDER CODE: ASI10473
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