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參數資料
| 型號： | ASI10807 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | ASI10807 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1 mA
45
V
BVCER
IC = 20 mA
RBE = 10
45
V
BVEBO
IE = 1 mA
3.5
V
ICBO
VCE = 28 V
250
A
hFE
VCE = 5.0 V
IC = 100 mA
15
150
---
Cob
VCB = 28 V
f = 1.0 MHz
5.0
pF
PG
η
C
VCE = 28 V
POUT = 1.0 W
f = 1,000 MHz
7.0
65
8.0
dB
%
NPN SILICON RF POWER TRANSISTOR
D1-28Z
DESCRIPTION:
The
D1-28Z is Designed for General
Purpose Class C Amplifier
Applications up to 1.0 GHz.
FEATURES:
P
G = 8.0 dB Typ. at 1 W/1,000 MHz
Emitter Ballasting for Ruggedness
Omnigold Metallization System
MAXIMUM RATINGS
IC
1.0 A
VCB
45 V
PDISS
7 W @ TC = 25
OC
TJ
-65 to +200
OC
TSTG
-65 to +150
OC
θθ
JC
25
OC/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10807
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
E
B
C
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