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參數資料
型號: ASI10824
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: HF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.500 INCH, FM-4
文件頁數: 1/1頁
文件大小: 15K
代理商: ASI10824
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
20
V
BVCES
IC = 100 mA
45
V
BVCBO
IC = 100 mA
45
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 16 V
10
mA
hFE
VCE = 5.0 V
IC = 5.0 A
10
200
---
COB
VCB = 12.5 V
f = 1.0 MHz
650
pF
GP
IMD3
ηηηη
C
VCE = 12.5 V
ICQ = 150 mA
f = 30 MHz
VCE = 12.5 V
ICQ = 150 mA
POUT = 100 W
10
40
12
-30
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
MRF421
DESCRIPTION:
The
ASI MRF421 is Designed for
High linear amplifier applications from
2.0 to 30 MHZ.
FEATURES:
P
G = 12 dB min. at 100 W/30 MHz
IMD
3 = -30 dBc max. at 100 W(PEP)
Omnigold Metalization System
MAXIMUM RATINGS
IC
20 A
VCBO
45 V
VCEO
20 V
VEBO
3.0 V
PDISS
290 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
0.6 °C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10824
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
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