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參數(shù)資料
| 型號(hào)： | ASJD1200R045Y-EX/S |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 1200 V, 0.045 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 162K |
| 代理商： | ASJD1200R045Y-EX/S |
SiC JFET
ASJD1200R045
ASJD1200R045
Rev. 0.0 12/10
Micross Components reserves the right to change products or specications without notice.
1
ADVANCED INFORMATION
Normally-ON Trench Silicon
Carbide Power JFET
FEATURES:
Hermetic TO-257 Packaging
200°C Maximum Operating Temperature (260
oC Contact Factory)
Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
Inherent Radiation Tolerance >100K TID
Positive Temperature Coefcient for Ease of Paralleling
Extremely Fast Switching with No “Tail” Current at 150°C
1200 Volt Drain-Source Blocking Voltage
RDS
(on)max of 0.045 Ω
Voltage Controlled
Low Gate Charge
Low Intrinsic Capacitance
APPLICATIONS:
Satellite Solar Inverters
Mil Spec Power Supplies
- Switch Mode
- Uninterrupted
Jet Engine Electronics
Down-hole Electronics (Motor / Compressor Control)
MAXIMUM RATINGS
BVDS
1200
V
RDS(ON)max
0.045
ETS,typ
TBD
μJ
Product Summary
Parameter
Symbol
Conditions
Value
Unit
ID, Tj=125
Tj = 125 °C
50
ID, Tj=150
Tj = 150 °C
40
Pulsed Drain Current
(1)
IDM
Tc = 25 °C
150
A
Short Circuit Withstand Time
tSC
VDD < 800 V, TC < 125 °C
50
μS
Power Dissipation
PD
Tc = 25 °C
TBD
W
Gate Source Voltage
VGS
AC
(2)
15 to +15
V
Operating and Storage Temperature
Tj, Tj,stg
55 to +200*
oC
Lead Temperature for Soldering
Tsold
1/8" from case < 10 s
260
oC
(1) Limited by pulse width
(2) RgEXT =1 ohm, tp < 200ns, see Figure 5 for static conditions
*Consult factory for 260
OC
Continuous Drain Current
A
THERMAL CHARACTERISTICS
Typ
Max
Thermal Resistance, junction to case
Rth,JC
TBD
Thermal Resistance, junction to ambient
Rth,JA
TBD
°C / W
Value
Unit
Symbol
Parameter
G (1)
S (3)
D (2,4)
Internal Schematic
1 2 3
4
TO-257
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
Die Inside
For more products and
information, please visit our
website at www.micross.com
相關(guān)PDF資料 |
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| ASJD1200R045SY-EL/V | 50 A, 1200 V, 0.045 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJD1200R045SY-EX/V | 50 A, 1200 V, 0.045 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJD1200R045SY-EL | 50 A, 1200 V, 0.045 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJD1200R045Y-EX/V | 50 A, 1200 V, 0.045 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJD1200R085Y-EX/S | 52 A, 1200 V, 0.085 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
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