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參數資料
| 型號： | ASJE1200R063SY-EX |
| 廠商： | MICROSS COMPONENTS |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 240K |
| 代理商： | ASJE1200R063SY-EX |
SiC JFET
ASJE1200R063
ASJE1200R063
Rev. 0.0 12/10
Micross Components reserves the right to change products or specications without notice.
1
ADVANCED INFORMATION
Normally-OFF Trench Silicon
Carbide Power JFET
FEATURES:
Hermetic TO-257 Packaging
200°C Maximum Operating Temperature (for 260
oC Contact Factory)
Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
Inherent Radiation Tolerance >100K TID
Positive Temperature Coefcient for Ease of Paralleling
Compatible with Standard Gate Driver ICs
Temperature Independent Switching Behavior
Extremely Fast Switching
1200 Volt Drain-Source Blocking Voltage
RDS
(on)max of 0.063 Ω
Voltage Controlled
Low Gate Charge
Low Intrinsic Capacitance
APPLICATIONS:
Satellite Solar Inverters
Mil Spec Power Supplies
- Switch Mode
- Uninterrupted
Jet Engine Electronics
Down-hole Electronics (Motor / Compressor Control)
MAXIMUM RATINGS
BVDS
1200
V
RDS(ON)max
0.063
ETS,typ
440
μJ
Product Summary
Parameter
Symbol
Conditions
Value
Unit
ID, Tj=125
Tj = 125 °C
30
ID, Tj=175
Tj = 175 °C
20
Pulsed Drain Current
(1)
IDM
Tc = 25 °C
60
A
Short Circuit Withstand Time
tSC
VDD < 800 V, TC < 125 °C
50
μS
Power Dissipation
PD
Tc = 25 °C
250
W
Static
15 to +3
V
AC
(2)
15 to +15
V
Operating and Storage Temperature
Tj, Tj,stg
55 to +200*
oC
Lead Temperature for Soldering
Tsold
1/8" from case < 10 s
260
oC
(1) Limited by pulse width
(2) RgEXT =0.5 ohm, tp < 200ns
*Contact factory for 260
oC
Continuous Drain Current
A
Gate Source Voltage
VGS
THERMAL CHARACTERISTICS
Typ
Max
Thermal Resistance, junction to case
Rth,JC
TBD
Thermal Resistance, junction to ambient
Rth,JA
TBD
°C / W
Value
Unit
Symbol
Parameter
G (1)
S (3)
D (2,4)
Internal Schematic
1 2 3
4
TO-257
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
Die Inside
For more products and
information, please visit our
website at www.micross.com
相關PDF資料 |
PDF描述 |
|---|---|
| ASJE1200R063Y-EL/S | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063Y-EL | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063SY-EL | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063SY-EL/S | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
| ASJE1200R063SY-EL/V | 30 A, 1200 V, 0.063 ohm, N-CHANNEL, SiC, POWER, JFET, TO-257AA |
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