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參數資料
| 型號： | AT-30511-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT, 4 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 100K |
| 代理商： | AT-30511-TR1 |
4-23
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Description
Hewlett-Packard’s AT-30511 and
AT-30533 are high performance
NPN bipolar transistors that have
been optimized for maximum fT at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-30533 uses the 3
lead SOT-23, while the AT-30511
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a multi-
plicity of tasks. The 5 emitter
finger interdigitated geometry
yields an extremely fast transistor
with high gain and low operating
currents.
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
AT-30511:1.1dB NF, 16 dB GA
AT-30533:1.1dB NF, 13 dB GA
Characterized for End-Of-
Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT
Plastic Packages
Tape-And-Reel Packaging
Option Available[1]
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA
bias. Voltage breakdowns are high
enough for use at 5 volts. High
gain capability at 1 V, 1 mA makes
these devices a good fit for
900 MHz pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett- Packard’s
10 GHz f T, 30 GHz fMAX Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
AT-30511
AT-30533
Outline Drawing
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
305
SOT-23 (AT-30533)
SOT-143 (AT-30511)
5965-8918E
相關PDF資料 |
PDF描述 |
|---|---|
| AT-30533-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-30511-TR1G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-30533-BLK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-30511-BLK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-30533-BLKG | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-30511-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-30511-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT30533 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 10MA I(C) | SOT-23 |
| AT-30533 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30533BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
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