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參數資料
| 型號： | AT-30533-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 261K |
| 代理商： | AT-30533-BLKG |
AT-30511, AT-30533
Low Current, High Performance NPN
Silicon Bipolar Transistors
Data Sheet
Description
Avago’s AT-30511 and AT-30533 are high performance
NPN bipolar transistors that have been optimized for
maximum fT at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-30533 uses the 3 lead SOT-23, while the AT-
30511 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced para-
sitic design of these transistors yields extremely high per-
formance products that can perform a multiplicity of tasks.
The 5 emitter finger interdigitated geometry yields an ex-
tremely fast transistor with high gain and low operating
currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery op-
erated systems as an LNA, gain stage, buffer, oscillator, or
active mixer. Typical amplifier designs at 900 MHz yield
1.3 dB noise figures with 13 dB or more associated gain at
a 2.7 V, 1 mA bias. Voltage breakdowns are high enough
for use at 5 volts. High gain capability at 1V, 1 mA makes
these devices a good fit for 900 MHz pager applications.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz fT, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance:
AT-30511: 1.1 dB NF, 16 dB GA
AT-30533: 1.1 dB NF, 13 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT Plastic Packages
Tape-And-Reel Packaging Option Available
Lead-free
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
305x
SOT-23 (AT-30533)
SOT-143 (AT-30511)
Note:
Top view. Package marking provides orientation
and identification. "x" is the date code.
相關PDF資料 |
PDF描述 |
|---|---|
| AT-30511-TR1G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-30511-BLKG | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31011-TR2G | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31033-BLKG | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31011-BLKG | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-30533TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-30533-TR1 | 制造商:Hewlett Packard Co 功能描述: |
| AT-30533-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-30533-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT305AC | 制造商:MCM 功能描述:CHARGER AND CHARGER CABLE |
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