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參數資料
| 型號： | AT-31011-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT, 4 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 102K |
| 代理商： | AT-31011-BLK |
AT-31011, AT-31033
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-31011 and AT-31033 are high performance
NPN bipolar transistors that have been optimized for
operation at low voltages, making them ideal for use in
battery powered applications in wireless markets. The
AT-31033 uses the 3 lead SOT-23, while the AT-31011
places the same die in the higher performance 4 lead
SOT-143. Both packages are industry standards
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely
high performance products that can perform a mul-
tiplicity of tasks. The 10 emitter finger interdigitated
geometry yields an extremely fast transistor with low
operating currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla-
tor, or active mixer. Applications include cellular and
PCS handsets as well as Industrial-Scientific-Medical
systems. Typical amplifier designs at 900 MHz yield
1.3 dB noise figures with 11 dB or more associated gain
at a 2.7 V, 1 mA bias. Moderate output power capability
(+9 dBm P1dB) coupled with an excellent noise figure
yields high dynamic range for a microcurrent device.
High gain capability at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager applications.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz fT, 30 GHz fmax
Self-Aligned-Transistor (SAT) process. The die are
nitride passivated for surface protection. Excellent
device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
Features
High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Operation
900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB GA
AT-31033: 0.9 dB NF, 11 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-143 SMT Plastic Package
Tape-And-Reel Packaging Option Available
Lead-free Option Available
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
310
SOT-23 (AT-31033)
SOT-143 (AT-31011)
Outline Drawing
相關PDF資料 |
PDF描述 |
|---|---|
| AT-31033-TR2 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31011-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31033-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31033-BLK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-31625-BLK | 2 CHANNEL, Si, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-31011-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT31011TR1 | 制造商:Hewlett Packard Co 功能描述: |
| AT-31011-TR1 | 制造商:HEWLETT 功能描述: |
| AT-31011-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-31011-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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