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參數資料
型號: AT-32011-BLKG
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-4
文件頁數: 1/10頁
文件大小: 279K
代理商: AT-32011-BLKG
AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT-23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla-
tor, or active mixer. Typical amplifier designs at 900 MHz
yield 1.2 dB noise figures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT Plastic Packages
Tape-And-Reel Packaging Option Available
Lead-free
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
320x
SOT-23 (AT-32033)
SOT-143 (AT-32011)
Note:
Top view. Package marking provides orientation
and identification. "x" is the date code.
相關PDF資料
PDF描述
AT-32033-TR2G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32033-BLKG UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32011-TR2G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32011-TR1G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-32033-TR1G UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
AT-32011-TR1 功能描述:IC TRANS NPN BIPOLAR SOT-143 RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿(最大):4.7V 頻率 - 轉換:47GHz 噪聲系數(dB典型值@頻率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA,3V 電流 - 集電極 (Ic)(最大):45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD,扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
AT-32011-TR1G 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT-32011-TR2G 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT320240Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:李守華 15889415469
AT-320240Q1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AT-320240Q1 320 X 240 DOTS 1/240 DUTY
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