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參數資料
| 型號： | AT-32033-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT, 3 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 112K |
| 代理商： | AT-32033-TR1 |
Agilent AT-32011, AT-32033
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Agilent’s AT-32011 and AT-32033 are
high performance NPN bipolar
transistors that have been
optimized for maximum ft at low
voltage operation, making them
ideal for use in battery powered
applications in wireless markets.
The AT-32033 uses the 3 lead
SOT-23, while the AT-32011 places
the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard, and
compatible with high volume
surface mount assembly techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
20 emitter finger interdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
applications. Voltage breakdowns
are high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz ft, 30
GHz fMAX Self-Aligned-Transistor
(SAT) process. The die are nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of these devices.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
320
SOT-23 (AT-32033)
SOT-143 (AT-32011)
Outline Drawing
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
Characterized for End-Of-
Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT
Plastic Packages
Tape-And-Reel Packaging
Option Available
Lead-free Option Available
相關PDF資料 |
PDF描述 |
|---|---|
| AT-32033-BLKG | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32011-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32011-TR2 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-TR1G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-BLK | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-32033-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32033-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT32063 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:???d???A??????NPN?g?????W?X?^ ?c?C???E?^?C?vSOT-363?p?b?P?[?W |
| AT-32063 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32063-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Current, High Performance NPN Silicon Bipolar Transistor |
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