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參數資料
| 型號： | AT-41435G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, 35, MICRO-X-4 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 71K |
| 代理商： | AT-41435G |
Agilent AT-41435
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Data Sheet
Features
Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical fT
Cost Effective Ceramic
Microstrip Package
Lead-free Option Available
35 micro-X Package
Description
Agilent’s AT-41435 is a general
purpose NPN bipolar transistor
that offers excellent high
frequency performance. The
AT-41435 is housed in a cost
effective surface mount 100 mil
micro-X package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50
at 1 GHz, makes
this device easy to use as a low
noise amplifier.
The AT-41435 bipolar transistor is
fabricated using Agilent’s 10 GHz
fT Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
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