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參數(shù)資料
| 型號(hào)： | AT-41511-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT, 4 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 112K |
| 代理商： | AT-41511-BLK |
AT-41511, AT-41533
General Purpose, Low Noise NPN
Silicon Bipolar Transistors
Data Sheet
Description
Avago’s AT-41511 and AT-41533 are general purpose
NPN bipolar transistors that offer excellent high
frequency performance at an economical price. The
AT-41533 uses the 3 lead SOT-23, while the AT-41511
places the same die in the lower parasitic 4 lead SOT-143.
Both packages are industry standard, and compatible
with high volume surface mount assembly techniques.
The 4 micron emitter-to-emitter pitch of these
transistors yields high performance products that can
perform a multiplicity of tasks. The 14 emitter finger
interdigitated geometry yields an intermediate-sized
transistor with easy to match to impedances, low noise
figure, and moderate power.
Optimized for best performace from a 5 to 8 volt bias
supply, these transistors are also good performers at
2.7 V. Applications include use in wireless systems as
an LNA, gain stage, buffer, oscillator, or active mixer.
An optimum noise match near 50 ohms at 900 MHz
makes these devices particularly easy to use as LNAs.
Typical amplifier designs at 900 MHz yield 1 dB noise
figures with 15 dB or more associated gain at a 5 V, 5 mA
bias, with good gain and noise figure obtainable at
biases as low as 2 mA.
The AT-415 series bipolar transistors are fabricated
using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT)
process. The die are nitride passivated for surface
protection. Excellent device uniformity, performance
and reliability are produced by the use of ion-
implantation, self-alignment techniques, and gold
metalization in the fabrication of these devices.
BASE
EMITTER
EMITTER COLLECTOR
BASE
EMITTER
COLLECTOR
415
SOT 23 (AT-41533)
SOT 143 (AT-41511)
Outline Drawing
Features
General Purpose NPN Bipolar Transistor
900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
Characterized for 3, 5, and 8 Volt Use
SOT-23 and SOT-143 SMT Plastic Packages
Tape-and-Reel Packaging Option Available
Lead-free Option Available
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-41533-BLK | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-TR2 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41511-TR2 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-41533-TR1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-41511-BLKG | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41511-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| AT-41511-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-143 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-41511-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41511-TR2G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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