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參數資料
| 型號： | AT-41532-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, SC-70, 3 PIN |
| 文件頁數： | 1/14頁 |
| 文件大小： | 1341K |
| 代理商： | AT-41532-BLK |
AT-41532
General Purpose, Low Current NPN Silicon Bipolar Transistor
Data Sheet
3-Lead SC-70 (SOT-323)
Surface Mount Plastic Package
Pin Configuration
Features
General Purpose NPN Bipolar Transistor Optimized for
Low Current, Low Voltage Applications at 900 MHz,
1.8 GHz, and 2.4 GHz
Performance (5 V, 5 mA)
0.9 GHz: 1 dB NF, 15.5 dB GA
1.8 GHz: 1.4 dB NF, 10.5 dB GA
2.4 GHz: 1.9 dB NF, 9 dB GA
Characterized for 3, 5, and 8V Use
Miniature 3-lead SOT-323 (SC-70) Plastic Package
High Breakdown Voltage (can be operated up to 10 V)
Lead-free
Applications
LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and
Down Converter for Cellular and PCS Handsets and
Cordless Telephones
LNA, Oscillator, Mixer, and Gain Amplifier for Pagers
Power Amplifier and Oscillator for RF-ID Tag
LNA and Gain Amplifier for GPS
LNA for CATV Set-Top Box
Description
Avago’s AT-41532 is a general purpose NPN bipolar transis-
tor that has been optimized for maximum ft at low voltage
operation, making it ideal for use in battery powered
applications in cellular/PCS and other wireless markets.
The AT-41532 uses the miniature 3-lead SOT-323 (SC-70)
plastic package.
Optimized performance at 5 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems. Typical
amplifier design at 900 MHz yields 1 dB NF and 15.5 dB as-
sociated gain at 5 V and 5 mA bias. High gain capability
at 1 V and 1 mA makes this device a good fit for 900 MHz
pager applications. A good noise match near 50 ohms at
900 MHz makes this a very user-friendly device. Moreover,
voltagebreakdownsarehighenoughtosupportoperation
at 10 V.
The AT-41532 belongs to Avago’s AT-4XXXX series bipolar
transistors. It exhibits excellent device uniformity, per-
formance, and reliability as a result of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication process.
BASE
EMITTER
COLLECTOR
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AT-41532-BLKG | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41532-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-323 RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-41532-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41532-TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323 |
| AT-41532-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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