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參數資料
| 型號： | AT-41533-TR2G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMT, 3 PIN |
| 文件頁數： | 3/10頁 |
| 文件大小： | 119K |
| 代理商： | AT-41533-TR2G |
2
Characterization Information, TA = 25°C
AT-41511
AT-41533
Symbol
Parameters and Test Conditions
Units
Min
Typ
Min
Typ
NF
Noise Figure
f = 0.9 GHz
dB
1.0
VCE = 5 V, IC = 5 mA
f = 2.4 GHz
1.7
1.6
GA
Associated Gain
f = 0.9 GHz
dB
15.5
14.5
VCE = 5 V, IC = 5 mA
f = 2.4 GHz
11
9
P1dB
Power at 1 dB Gain Compression (opt tuning)
f = 0.9 GHz
dBm
14.5
VCE = 5 V, IC = 25 mA
G1dB
Gain at 1 dB Gain Compression (opt tuning)
f = 0.9 GHz
dB
17.5
14.5
VCE = 5 V, IC = 25 mA
IP3
Output Third Order Intercept Point,
f = 0.9 GHz
dBm
25
VCE = 5 V, IC =25 mA (opt tuning)
|S21E|2
Gain in 50 Ω system; VCE = 5 V, IC = 5 mA
f = 0.9 GHz
dB
13.5
15.5
10.8
12.8
f = 2.4 GHz
7.9
5.2
AT-41511, AT-41533 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
50
PT
Power Dissipation[2,3]
mW
225
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Electrical Specications, TA = 25°C
AT-41511
AT-41533
Symbol
Parameters and Test Conditions
Units
Min
Typ
Max
Min
Typ
Max
hFE
Forward Current Transfer Ratio
VCE = 5 V
-
30
150
270
30
150
270
IC = 5 mA
ICBO
Collector Cuto Current
VCB = 3 V
μA
0.2
IEBO
Emitter Cuto Current
VEB = 1 V
μA
1.0
Thermal Resistance:[2]
Tjc =550°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 26°C.
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